Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date.
HEXFET® Power MOSFET IRLZ44N PD - 9.1346B l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated BUZ11 Data Sheet September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 m This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. BUZ11 Power Transistor Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.