Buz11 data sheet

Order today, ships today. BUZ11-NR4941 – N-Channel 50V 30A (Tc) 75W (Tc) Through Hole TO-220-3 from ON Semiconductor. Pricing and Availability on millions of electronic components from Digi-Key Electronics. BUZ11 datasheet, BUZ11 pdf, BUZ11 data sheet, datasheet, data sheet, pdf
Jun 21, 2019 · BUZ11 Datasheet PDF. Except as expressly buz11 datasheet in buz11 datasheet Agreement, Licensee datashedt not disclose, or allow access to, the Content or Modifications datashdet any third party. Please allow buz11 datasheet days for a response. BUZ11/D BUZ11 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

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HEF4052B All information provided in this document is subject to legal disclaimers. 2 J 0 8;*+ Product data sheet Rev. 10 — 25 March 2016 3 of 21
Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. BUZ11/D BUZ11 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

BUZ11 Datasheet(HTML) 2 Page - STMicroelectronics: zoom in zoom out. 2 / 8 page buz11 n - channel 50v - 0.03Ω- 33a to-220 stripfet mosfet typicalrds(on) = 0.03 Ω avalancherugged technology 100%avalanche tested high current capability 175 oc operatingtemperature applications high current, high speedswitching solenoid and relaydrivers regulators dc-dc& dc-ac converters motor control, audio amplifiers
BUZ11 from Intersil Corporation. Find the PDF Datasheet, Specifications and Distributor Information. Power MOSFET IRFZ44, SiHFZ44 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature ... This datasheet is subject to change without notice.

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Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date.
HEXFET® Power MOSFET IRLZ44N PD - 9.1346B l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated BUZ11 Data Sheet September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 m This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. BUZ11 Power Transistor Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.